%e1t.su duatoi tpioaucti, one. 20 stern ave. springfield, new jersey 07081 usa general purpose transistor npn silicon felephone: (973) 376-2922 (212)227-6005 collector 3 MPS3904 1 emitter maximum ratings rating collector- emitter voltage collector- base voltage emitter- base voltage collector current ? continuous total device dissipation @ ta = 25c derate above 25c total power dissipation @ t/\ 60c total device dissipation @ tc = 25c derate above 25c operating and storage junction temperature range symbol vceo vcbo vebo 'c pd pd pd tj, tstg value 40 60 6.0 100 625 5.0 450 1.5 12 -55to+150 unit vdc vdc vdc madc mw mw/c mw watts mw/c c to-92 thermal characteristics characteristic thermal resistance, junction to ambient thermal resistance, junction to case symbol r8ja r6jc max 200 83.3 unit c/w c/w electrical characteristics oa = 25c unless otherwise noted) characteristic symbol min max unit off characteristics collector- emitter breakdown voltagec1) (ic = 1.0 madc, ib = o) collector- base breakdown voltage oc = 10nadc, ie = o) emitter- base breakdown voltage (!e = 10nadc, ic = 0) collector cutoff current (vce = 30 vdc, veb(off) = 3.0 vdc) base cutoff current (vce = 30 vdc, veb(off) = 3.0 vdc) v(br)ceo v(br)cbo v(br)ebo 'cex ibl 40 60 6.0 ? ? ? ? ? 50 50 vdc vdc vdc nadc nadc 1. pulse test: pulse width < 300 us, duty cycle < 2.0%. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by n.i semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.f semi-conductors encourages customers to verity that datasheets are current before placing orders. ounllfv
MPS3904 electrical characteristics (ta = 25c unless otherwise noted) (continued) characteristic symbol win max unit on characteristics(i) dc current gain (1c = 0.1 madc, vce = 1 .0 vdc) oc = 1 .0 madc, vce = 1 -0 vdc) oc = 10 madc, vce = 1-0 vdc) (ic = 50 madc, vce = 1-0 vdc) (ic = 100 madc, vce = 1.0 vdc) collector- emitter saturation voltage oc = 10 madc, ib = 1-0 madc) (|q = 50 madc, ib = 5.0 madc) base -emitter saturation voltage oc = 1 0 madc, ib = 1 -0 madc) oc = 50 madc, ib = 5.0 madc) hfe vce(sat) vbe(sat) 40 70 100 60 30 ? ? 0.65 ? ? ? 300 ? ? 0.2 0.3 0.85 1.1 ? vdc vdc small-signal characteristics current- gain ? bandwidth product oc = 10 madc, vce = 20 vdc. f = 10 mhz) output capacitance (vcb = 5.0 vdc, ie = o, f = 1 .0 mhz) input capacitance (veb = 0.5 vdc, ic = o, f = 1 .0 mhz) input impedance (ic = 1 .0 madc, vce = 10 vdc, f= 1.0 khz) voltage feedback ratio oc = 1.0 madc, vce = 10 vdc, f = 1.0 khz) small-signal current gain (ic = 1 .0 madc, vce = 10 vdc, f = 1.0khz) output admittance (ic = 1 .0 madc, vce = 1 0 vdc, f = 1 .0 khz) noise figure oc = 100nadc, vce = 5.0 vdc, rs = 1.0 ki, f = 1.0khz) ft cobo cjbo hie hre hfe noe nf 200 ? ? 1.0 0.5 100 1.0 ? ? 4.0 8.0 10 8.0 400 40 5.0 mhz pf pf kii x 10-4 ? (imhos db switching characteristics delay time rise time storage time fall time (vcc = 3.0 vdc, vbe(off) = -0.5 vdc, ic = 10 madc, ibi =1.0 madc) (vcc = 3-0 vdc, ic = 10 madc, ibi = lb2 = 1-0 madc) td tr ts tf ? ? ? ? 35 50 900 90 ns ns ns ns 1. pulse test: pulse width < 300 us. duty cycle < 2.0%. equivalent switching time test circuits 3.0v< 300ns duty cycle = 2% -0.5v <1.0ns ? +10.9 v 10 |
